IBS Develops Modular Transistor Technology for 2D Semiconductors

The Institute for Basic Science's Van der Waals Quantum Solids Research Center has developed a modular transistor fabrication technology that selectively substitutes atoms in two-dimensional semiconductors, the institute announced. The results were published in the journal Science on October 16, 2026, according to digitaltoday.co.kr.

The research team replaced selenium atoms in tungsten diselenide (WSe2) with oxygen, sulfur and tellurium to form insulators, semiconductors and semimetals at desired locations. The conversion was carried out in atomic layers about 0.7 nanometers thick by controlling reaction temperature and gas pressure.

A transistor made with the method showed a subthreshold swing of 61.3 millivolts, close to the theoretical room-temperature limit of about 60 mV, and an on/off current ratio exceeding 10 million. The energy barrier between electrode and semiconductor was reduced to about one third of that of conventional direct metal electrode junctions, while the equivalent oxide thickness of the insulating film was implemented below 1 nanometer.

The team also fabricated a complementary inverter stacking p-type and n-type transistors vertically, operating at 1 volt. The research was conducted at the Institute for Basic Science's Van der Waals Quantum Solids Research Center, a government-funded research institute under the Ministry of Science and ICT.