Samsung to use TSMC 3nm process for Nvidia's NVHBM base die

Samsung Electronics is moving to partially use TSMC process technology for Nvidia's NVHBM, a custom memory product based on HBM4E, according to inews24.com. The report places the development on October 19, 2026.

Nvidia has reportedly asked Samsung Electronics, SK hynix and Micron to produce the base die of NVHBM on TSMC's 3-nanometer process. The base die is the bottom chip in a stacked DRAM package that connects the memory to the GPU.

In Nvidia's NVHBM, the memory controller is moved from the GPU to the base die, a change that gives the lower chip a larger role in how the memory package works.

Industry observers note that AMD and Broadcom could also request TSMC process technology, which would push base die production outside the memory makers. At a recent National Assembly lecture, KAIST professor Kim Jeong-ho said memory design differs depending on whether the customer is Nvidia, AMD or Google, and that memory makers now take orders and design from the start rather than making and selling finished products.