Micron unveils G11 3D NAND with over 400 layers, 2027 production
Micron says G11 will roughly double bit density over G9 and raise I/O speed to 5,400 MT/s, with mass production set for the second half of 2027.
Micron announced its next-generation G11 3D NAND at a company event this week, with mass production scheduled for the second half of 2027, according to tomshardware.com.
The company says G11 will roughly double bit density compared with its current G9 generation, from about 21 Gb/mm2 to about 42 Gb/mm2 for 3D TLC. Micron also claims an I/O speed increase of up to 50%, from 3,600 MT/s to 5,400 MT/s, and a cut in energy consumption per bit of more than 25%.
G11 will use wafer-on-wafer bonding, manufacturing the NAND array and peripheral logic on separate wafers using different process technologies. The design will feature more than 400 NAND layers, though Micron did not disclose the exact number of active wordline layers or decks.
Details held for 2027
Micron expects to disclose more technical details about G11 in 2027, closer to high-volume manufacturing. The company also said it is developing high-mobility materials and denser cell architectures to scale 3D NAND beyond G11.
Micron's current G9 (N160) 3D TLC NAND offers about 21 Gb/mm2 and a 3,600 MT/s interface, and the company has used CMOS-under-array architectures for several generations of NAND. Scott DeBoer, Micron president and chief technology and products officer, presented the G11 plans at the event.
Quick answers
When will Micron's G11 3D NAND enter mass production?
Micron says G11 is scheduled to enter mass production in the second half of 2027.
How many layers does Micron's G11 3D NAND have?
Micron says G11 will feature more than 400 NAND layers but has not disclosed the exact number of active wordline layers or decks.
What I/O speed does G11 offer?
Micron claims G11 raises I/O speed by up to 50%, from 3,600 MT/s to 5,400 MT/s.